Compact sensing apparatus having an orthogonal sensor and methods for forming same

ABSTRACT

A sensing apparatus having a sensor formed in a monolithic semiconductor substrate and oriented orthogonally to a signal conditioner is provided. The sensor generates a sensing signal in response to a predetermined physical stimulus. A signal conditioner electrically connected and responsive to the sensor conditions the sensing signal. The signal conditioner, moreover, is preferably formed in the same semiconductor substrate and, more preferably is oriented at a right angle relative so as to be orthogonal to the sensor to thereby enhance the compactness of the sensing apparatus.

RELATED APPLICATIONS

[0001] This application claims priority to Provisional Application Ser.No. 60/288,312, filed May 2, 2001, and incorporates by reference thedisclosures of Provisional Application Ser. No. 60/288,282 filed May 2,2001, Provisional Application Ser. No. 60/288,313 filed May 2, 2001,Provisional Application Ser. No. 60/287,856 filed May 1, 2001,Provisional Application Ser. No. 60/287,763 filed May 1, 2001,Provisional Application Ser. No. 60/288,281 filed May 2, 2001, andProvisional Application Ser. No. 60/288,279 filed May 2, 2001.

FIELD OF THE INVENTION

[0002] The present invention relates to the field of sensing apparatusesand, more particularly, to the field of sensing apparatuses having asensing element formed in a monolithic semiconductor substrate.

BACKGROUND OF THE INVENTION

[0003] Sensing apparatuses are widely used in various types ofmechanical and electrical systems for detecting and measuring myriadphysical and chemical phenomena. The various uses for such devicesinclude sensing the presence and intensity of electrical and magneticfields, detecting mechanical forces, measuring the temperature or flowof a liquid or gas, and registering the acceleration of a solid body.

[0004] Over the years various types of sensing devices have beendeveloped to accomplish these disparate tasks. Some of the sensingapparatuses developed rely on a sensing element (e.g. a transducer)having a specific preferred orientation in relation to an electrical ormagnetic field or to a mechanical force to be sensed. Typical examplesof electrical or magnetic field sensing elements are position andproximity sensors such as a Hall-effect cell, magnetoresistor,capacitive sensing element, and inductive sensing elements. An exampleof a mechanical force sensing element is a stress gauge that measuresmechanical stress or weight of an object. Another example of amechanical force sensing element is the accelerometer, which measuresthe acceleration of an object.

[0005] These sensing devices, then, typically have a preferredorientation for the sensing element relative to the electrical ormagnetic field or to the physical force being sensed. The device thusmust be oriented so that the sensing element has the preferredorientation if the sensor's sensitivity is to be magnetized. There alsomay be extraneous electrical or magnetic fields or mechanical forcesassociated with use of the system with which the sensing device mustaccommodate, preferably by orienting the sensor relative to theseextraneous fields or forces in a specific direction so as to reduce thesensor's sensitivity to the extraneous fields or forces. Suchorientation can reduce sensing errors or noise caused by the presence ofother fields or forces within the vicinity of the sensing device or themovement of other objects.

[0006] Sensing apparatuses typically also rely on signal conditioningcircuitry to amplify or otherwise condition the sensing signal thattypically has too low a magnitude to overcome extraneous noise effects.The signal conditioning circuitry is also employed to condition asensing signal that contains a large offset or other error signal thatcan overdrive sensitive monitoring equipment. Indeed, the signalconditioning circuitry can condition a sensing signal not otherwiseconducive to transmission over an extended distance to a remotelylocated electrical device such a sensor monitoring circuit.

[0007] In the manufacture of a sensing apparatus, the sensing element,generally defining a sensor, and the corresponding signal conditioningcircuitry defining a signal conditioner are both formed on a commonsurface of a semiconductor wafer. Conventional techniques formanufacturing a sensing apparatus generally leave the sensor and thesignal conditioner on a common, single-plane surface. Conductive tracesare then formed directly on the common surface between the sensor andsignal conditioner to electrically connect each with the other.Therefore, for a sensing apparatus having a signal conditioner formed ina common plane with the sensor, the combined extent of the surface arearequired for both the sensor and the signal conditioner will generallydictate the overall size of the sensing apparatus.

[0008] Having the sensor and the signal conditioner formed on a commonplane inevitably results in the sensing apparatus having a relativelylarge surface area relative to the depth of the device. Moreover,because the sensor will of necessity be oriented with respect to thefield or force to be sensed, one will be constrained in attempts atorienting the sensing apparatus in a system so as to accommodate thesurface area of the sensing apparatus. The electrical and mechanicalsystems in which sensing apparatuses are employed, however, have becomeincreasingly smaller over the years. Yet the ability to position thesensing apparatus in an electrical or mechanical system of limited size,though, is accordingly severely constrained depending on the preferredorientation of the sensor and the orientation of the signal conditionerrelative to the sensor. Thus, there is a need for a sensing apparatushaving a smaller surface area than conventional ones having the sensorand signal conditioner positioned in the same plane.

[0009] The amount of area occupied by the sensor is typically muchsmaller than the area occupied by the signal conditioner. Moreover, incontrast to the sensor, the signal conditioner does not require aspecific orientation relative to the electrical or magnetic field or themechanical force that is to be sensed by the sensing apparatus. One wayof achieving a reduced cross section, then, is to physically separatethe sensor and signal conditioner, and orient the separated componentsin separate planes while maintaining the necessary electrical connectionbetween them. Because the electrical and mechanical systems in which thesensing apparatuses will be employed are likely to be subjected tosignificant stress forces, however, it is necessary to maintain thestructural integrity of the sensing apparatus, especially the necessaryelectrical connection between the sensor and the signal conditioner.Therefore, there also is a need for a sensing apparatus that achievesboth a reduction in overall size while maintaining its structuralintegrity.

SUMMARY OF THE INVENTION

[0010] With the foregoing in mind, the present invention advantageouslyprovides a sensing apparatus reduced in size by orienting the sensor andsignal conditioner in separate planes while maintaining the overallstructural integrity of the device. In addition, the method aspects ofthe present invention advantageously provide means for forming a compactsensing apparatus having structural integrity.

[0011] More specifically, the present invention provides a compactsensing apparatus having a sensor formed in a surface of a monolithicsemiconductor substrate and a signal conditioning circuitry defining asignal conditioner formed in the same semiconductor substrate. Thesensor and signal conditioner are oriented relative to each other toadvantageously reduce the overall size of the sensing apparatus. Thesensor generates a sensing signal in response to a predeterminedphysical stimulus. The signal conditioner senses the sensing signalgenerated by the sensor in response to the predetermined physicalstimulus. The physical stimulus can be an electric field, a magneticfield, or a mechanical force.

[0012] A significant advantage of the present invention is theorientation of the sensor relative to the signal conditioner.Specifically, the sensor is oriented orthogonally to the signalconditioner and positioned on a surface substantially smaller than thesurface on which the signal conditioner is positioned. Orthogonalorientation reduces the lengthwise extent of the sensing apparatus,making the device much more compact than conventional devices havingsame-plane sensor and signal conditioning circuitry. Specifically,because the depth (or height) and lateral extent of the sensingapparatus will be a function of the surface area of the surface on whichthe sensor is formed, orienting the sensor orthogonally relative to thesurface on which the signal conditioner is formed accordingly reducesthe height and lateral extend of the compact sensing apparatus.

[0013] Moreover, because the sensor and signal conditioner are formed onseparate planes of a monolithic semiconductor substrate rather thanpositioned separately, the structural integrity of the sensing apparatusis accordingly enhanced. In addition, the sensor and the signalconditioner are electrically connected via a stable electricalconnection that can resist breakage by being formed on the monolithicsemiconductor substrate. The electrical connection more specifically caninclude at least one integrated conductor formed in the monolithicsemiconductor substrate by, for example, heavily doping a region of thesubstrate. The at least one integrated conductors preferably are formedin and extend over an edge portion of the monolithic semiconductorsubstrate. The edge more specifically is the edge shared by the surfaceon which the sensor is formed and the separate surface on which thesignal conditioner is formed.

[0014] A conductive path between the sensor and the signal conditionercan be provided by including at least one pair of metal conductors alsoformed on the monolithic semiconductor substrate. One of the at leastone pair of metal conductors connects to the at least one integratedconductor and extends along the surface on which the sensor is formed toconnect to the sensor. The other of the at least one pair of metalconductors preferably connects to the same at least one integratedconductor and extends along the surface in which the signal conditioneris formed to connect to the signal conditioner. The respectiveconductors extending from the sensor and the signal conditioner, each onseparate planes of the same semiconductor substrate, are electricallyconnected at the edge-positioned integrated conductor so as to completea stable, reliable conductive path between the sensor and the signalconditioner.

[0015] The sensor positioned orthogonally on the monolithic substratecan sense electrical or magnetic fields, as well as mechanical forcesoriented perpendicularly or horizontally relative to the sensor,depending on the nature of the sensor. More specifically an orthogonalsensor will sense electrical or magnetic fields, or mechanical forces,oriented perpendicularly to the planar surface of the sensor.Alternatively, a transverse sensor can sense electrical or magneticfields, or mechanical forces that are oriented parallel to the planarsurface of the sensor.

[0016] A second conductive path can also be provided, one which linksthe sensing apparatus to a remote electrical device such as a sensingmonitor. The second conductive path, specifically, can include anelectrical conductor that electrically connects to the signalconditioner and extends from the signal conditioner to connect to thepreselected electrical device, the device being positioned apart fromthe sensing apparatus. Thus, the conductive path thereby forms aconductive path between the compact sensing apparatus and the remotelypositioned preselected electrical device. The preselected electricaldevice preferably will be a sensing monitor. The compact sensingapparatus also can include a mounting base to which the monolithicsubstrate is attached to thereby provide a separate or additionalsupport structure underlying the substrate-mounted sensor andsubstrate-mounted signal conditioner.

[0017] The sensing apparatus, moveover, can further include a housing orother type of encapsulation extending over all or a portion of thesensing apparatus to thereby encapsulate at least a portion of thesignal conditioner SO as to provide a protective cover the sensingapparatus. The electrical conductor providing the conductive pathbetween the signal conditioner and a remotely positioned electricaldevice, then, extends through the encapsulation to thereby electricallyconnect the sensing apparatus with the sensing monitor or otherpreselected electrical device.

[0018] In yet an additional embodiment, the sensing apparatus includesan encapsulation extending over the sensor as well as the signalconditioner. Specifically, with respect to a sensor comprising amagnetoresistor or Hall element cell, the encapsulation preferably is anonmagnetic material that partially encapsulates the sensor and thesignal conditioner that are both formed on the monolithic semiconductorsubstrate. Moreover, the sensor can be a magnetoresistor or Hall elementcell. In the case of magnetic sensor, the encapsulation preferablyfurther comprises a magnetic encapsulation that partially encapsulatesthe sensor and the signal conditioner and is positioned behind theplanar surface of the sensor. The magnetic material of the magneticencapsulation, moreover, is preferably charged in a direction parallelto an imaginary straight line extending between the sensor and themagnetic encapsulation, the line being generally perpendicular to boththe planar surface of the sensor and the edge of the magneticencapsulation that is closest to or abuttingly in contact with themonolithic semiconductor substrate. In each of the respectiveembodiments of the present invention, the sensors can be any of avariety of sensing element types that generate a sensing signal inresponse to one of a host of physical stimuli. The sensor, for example,can be a magnetoresistor or a Hall-effect cell for detecting magneticfields, as already noted. The sensor alternatively can be capacitivetransducer for detecting electrical fields. Types of sensors alsoinclude ones for detecting mechanical forces such as pressure sensors,flow sensors, and accelerometers. These and a host of other types ofsensors can be accommodated with the present invention as will bereadily apparent to those of skilled in the relevant art.

[0019] The present invention, moreover, encompasses various methodaspects as well. The present invention provides a method for forming acompact sensing apparatus that includes positioning a signal conditioneron a monolithic semiconductor substrate. The monolithic semiconductorsubstrate, for example, can be cut from a wafer of semiconductormaterial on which a signal conditioner has been formed. Preferably, aplurality of signal conditioners will be formed on one wafer surface inorder to efficiently form multiple sensing apparatuses. After theplurality of signal conditioners is formed on the wafer surface, thewafer surface is cut into multiple monolithic semiconductor substrates,each of which has a signal conditioner formed thereon. If the signalconditioner has been formed on the surface of the wafer and the wafercut into an individual monolithic semiconductor substrate, the substrate(or each of a plurality of substrates) is then rotated appropriately sothat a sensor can be formed on a distinct plane of the monolithicsemiconductor substrate. The sensor and the signal conditioner will beelectrically connected and oriented orthogonally relative to each other.

[0020] The method aspects of the invention further include forming atleast one integrated conductor on the monolithic semiconductorsubstrate, preferably by doping the monolithic semiconductor substratewith a suitable material for making the semiconductor conductive so asto thereby form the integrated conductor having the desired conductiveproperties for completing a conductive path between the sensor and thesignal conditioner. Using the at least one integrated conductor as anelectrical juncture, the conductive path between the sensor and thesignal conditioner can be completed by electrically connecting thesensor to at least one integrated conductors and electrically connectingthe signal conditioner to the same integrated conductor to thereby formthe conductive path.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Some of the features, advantages, and benefits of the presentinvention having been stated, others will become apparent as thedescription proceeds when taken in conjunction with the accompanyingdrawings in which:

[0022]FIG. 1 is a perspective view of a sensing apparatus according tothe present invention;

[0023]FIG. 2 is a perspective view of a mounted sensing apparatusaccording to the present invention;

[0024]FIG. 3 is a side elevational view of a sensing apparatus accordingto the present invention;

[0025]FIG. 4 is a side elevational view of a sensing apparatus accordingto the present invention;

[0026]FIG. 5 is perspective view a sensing apparatus according to thepresent invention;

[0027]FIG. 6 is a perspective view of a sensing apparatus according tothe present invention;

[0028]FIG. 6A is a cross sectional view of a sensing apparatus accordingto the present invention; and

[0029]FIG. 7 is a perspective view of a sensing apparatus according tothe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The present invention will now be described more fullyhereinafter with reference to the accompanying drawings which illustratepreferred embodiments of the invention. This invention may, however, beembodied in many different forms and should not be construed as limitedto the embodiments set forth herein. Rather, these embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the invention to those skilled in the art.Like numbers refer to like elements throughout, the prime notation, ifused, indicates similar elements in alternative embodiments.

[0031]FIG. 1 illustrates a compact sensing apparatus 20 according to afirst embodiment of the present invention. The compact sensing apparatus20 includes a monolithic substrate 22 having a sensor surface 24 and asignal conditioner surface 26, a sensor 34 formed on the sensor surface24 for generating a sensing signal in response to a predeterminedphysical stimulus. The compact sensing apparatus 20 further includessignal conditioning circuitry defining a signal conditioner 36, thesignal conditioner 36 being formed in the signal conditioner surface 26of the monolithic semiconductor substrate 22. The signal conditioner 36,moreover, is electrically connected to the sensor 34 for conditioningthe sensing signal generated by the sensor 34 in response to thepredetermined physical stimulus. A sensing apparatus formed on amonolithic substrate is illustrated in U.S. Pat. No. 5,670,886 toApplicants titled Method and Apparatus for Sensing Proximity or Positionof an Object Using Near-Field Effects, the disclosures of which areincorporated herein in their entirety. As will be readily understood bythose skilled in the art, the physical stimulus can be an electricfield, a magnetic field, or a mechanical force.

[0032] A significant advantage of the present invention is theorientation of the sensor 34 relative to the signal conditioner 36.Preferably, the sensor 34 is oriented orthogonally to the signalconditioner 36. Orthogonal orientation reduces the lengthwise extent Lof the sensing apparatus 20, making the device much more compact thanconventional devices having same-plane sensor and signal conditioningcircuitry. (See FIG. 2.) A sensor formed on a substrate and orientedorthogonally to a signal conditioner also formed on the substrate isillustrated in applicants' co-pending application titled Compact SensingHaving an Orthogonal Sensor Formed in a Monolithic Substrate and in U.S.Pat. No. 5,670,886 to applicants titled Method and Apparatus for SensingProximity or Position of an Object Using Near-Field Effects, thedisclosures of which are incorporated herein in their entirety.

[0033] Moreover, according to the present invention, advantage can betaken of the fact that the circuitry required for the signal conditioner36 is typically more extensive than that associated with the sensor 34.Specifically, because the height H and lateral extent W of the sensingapparatus 20 will be a function of the surface area of the sensorsurface 24 when the sensor 34 is orthogonal to the signal conditioner36, the sensor surface 24 preferably is smaller than the signalconditioner surface 26 to thereby reduce the height and lateral extendof the compact sensing apparatus 20. (See FIG. 2)

[0034] As further illustrated in FIG. 1, the signal conditioner 36preferably is electrically connected to the sensor 34 via a conductivepath comprising at least one integrated conductor 42 formed in themonolithic semiconductor substrate 22 and extending over an edge portion44 of the monolithic semiconductor substrate 22, the edge specificallybeing the edge shared by the sensor surface 24 and the signalconditioner surface 36. The conductive path, moreover, preferably alsoincludes at least one pair of metal conductors 46,48 formed on themonolithic semiconductor substrate 22. More specifically, one of the atleast one pair of metal conductors 46 connects to the at least oneintegrated conductor 42 and extends along the sensor surface 24 toconnect to the sensor 34 formed therein. The other of the at least onepair of metal conductors 48, then, preferably connects to the at leastone integrated conductor 42 and extends along the signal conditionersurface 26 to connect to the signal conditioner 36 formed therein tothereby complete the conductive path between the sensor 34 and thesignal conditioner 36.

[0035] Preferably, each of the at least one integrated conductors 42 isformed by heavily doping the monolithic semiconductor substrate 22 in atleast one region of the monolithic semiconductor substrate 22 whereinthat region extends over an edge portion of the monolithic semiconductorsubstrate 22 and the edge is that edge shared by the sensor surface andthe signal conditioner surface. A conductor, such as a metal conductor,can then connect to the sensor 34 and extend from the sensor 34 alongthe sensor surface 24 to one of the at least one edge-positionedintegrated conductors 42 to thereby form an electrical connectionbetween the sensor and the integrated conductor. Similarly, anotherconductor—again, for example, a metal conductor—can connect to thesignal conditioner 36 and extend therefrom along the signal conditionersurface 26 to the same at least one integrated conductors 42 to therebyelectrically connect the signal conditioner 36 to the integratedconductor 42. Thus, the sensor 24 and the signal conditioner jointlyconnect electrically to a same at least one integrated conductor 42thereby completing the conductive path between the sensor 34 and thesignal conditioner 36.

[0036] As illustrated in FIGS. 3-4, a sensor positioned orthogonally onthe monolithic substrate 22 can sense electrical or magnetic fields, aswell as mechanical forces, oriented perpendicularly or horizontallyrelative to the sensor, depending on the nature of the sensor 34. Morespecifically an orthogonal sensor 34 will sense electrical E or magneticfields B, or mechanical forces F, oriented perpendicularly to the planarsurface of the sensor 34. (See FIG. 3) Alternatively, a transversesensor 34′ can sense electrical E or magnetic fields B, or mechanicalforces F that are oriented parallel to the planar surface of the sensor34′. (See FIG. 4) In each case the field or force is generated by anentity 50 spaced apart from the sensing apparatus mounted sensor 34,34′.

[0037]FIG. 5 illustrates a second embodiment of the present inventionwherein the conductive path between the sensor 134 and the signalconditioner 136 defines a first conductive path, and the sensingapparatus 120 further includes a second conductive path. The secondconductive path, specifically, includes an electrical conductor 160 thatis electrically connected to the signal conditioner 136 and extendstherefrom to connect to a preselected electrical device 170 positionedapart from the sensing apparatus 120. Thus, the conductive path therebyforms a conductive path between the compact sensing apparatus 120 andthe remotely positioned preselected electrical device 170. Thepreselected electrical device 170 preferably will be a sensing monitor.The compact sensing apparatus 120, as also illustrated in FIG. 5, canfurther include a mounting base 180 to which the monolithic substrate122 is attached to thereby provide a separate or additional supportstructure underlying the substrate-mounted sensor 124 and substratemounted signal conditioner 126.

[0038] As further illustrated in FIGS. 6, 6A the sensing apparatus 120can further include a housing or other type of encapsulation extendingover all or a portion of the sensing apparatus 120 to therebyencapsulate at least a portion of the signal conditioner 136 so as toprovide a protective cover therefor. The electrical conductor 160providing a conductive path between the signal conditioner 136 and aremotely positioned electrical device 170, then, extends through theencapsulation to thereby electrically connect the sensing apparatus 120and the preselected electrical device 170.

[0039]FIG. 7 illustrates a third embodiment of the present invention,the sensing apparatus 220 having an encapsulation extending over thesensor 234 formed on the sensor surface 224 as well as the signalconditioner formed on the signal conditioning surface 226. With respectto a sensor 234 comprising a magnetoresistor or Hall element cell, theencapsulation preferably is a nonmagnetic material that partiallyencapsulates the monolithic semiconductor substrate 222, the sensor 234formed in the substrate, and the signal conditioner 236 formed in thesubstrate. Moreover, as illustrated, a sensing apparatus 220 having asensor 234 comprising a magnetoresistor or Hall element cell furthercomprises a magnetic encapsulation 228 that partially encapsulates themonolithic semiconductor substrate 222, the sensor 234 formed in thesubstrate 222, and the signal conditioner 236 formed in the substrate222. More specifically, the magnetic encapsulation 228 is behind theplanar surface of the sensor 234 formed on the sensor surface 224 andthe magnetic material of the magnetic encapsulation 228 is preferablycharged in a direction parallel to an imaginary straight line extendingbetween the sensor 234 and the magnetic encapsulation 228, the linebeing generally perpendicular to both the planar surface of the sensor234 and the edge of the magnetic encapsulation 228 that is closed orabuttingly in contact with the monolithic semiconductor substrate 222.

[0040] Further, the second conductive path, as illustrated in FIG. 7,preferably is provided by an output wire 262 and ground wire 264. Anelectrical connection with the signal conditioner 236 preferably is bemade by contacting the output wire 262 and the ground wire 264 towirebond pads 227, 229 formed on the monolithic substrate 222 andelectrically connected to the signal conditioner 236 as also illustratedin FIG. 7. The connection between the wirebond pads 227, 229 and theoutput wire 262 and the ground wire 264, respectively, is preferablyheld in place by use of a conductive epoxy that causes the output wire262 and the ground wire 264 to adhere to the wirebond pads 227, 229.

[0041] As with respect to the first embodiment, the sensors 134, 234comprising the second and third embodiments of the invention likewisecan be any of various types of sensing elements for generating a sensingsignal in response to a host of physical stimuli. The sensor, forexample, can be a magnetoresistor or a Hall effect cell for detectingmagnetic fields B. The sensor alternatively can be capacitive transducerfor detecting electrical fields E. Types of sensors also include onesfor detecting mechanical forces F such as pressure sensors, flowsensors, and accelerometers. These and a host of other types of sensorscan be accommodated with the present invention as will be readilyapparent to those of ordinary skill in the relevant art.

[0042] FIGS. 1-7, moreover, illustrate method aspects of the presentinvention. The method for forming a compact sensing apparatus includespositioning a signal conditioner 36,136, 236 on a monolithicsemiconductor substrate. The monolithic semiconductor, for example, canbe cut from a wafer of semiconductor material on which a signalconditioner 36,136, 236 has been formed. Preferably, a plurality ofsignal conditioners will be formed on one wafer surface in order toefficiently form multiple sensing apparatuses 20, 120, 220. After theplurality of signal conditioners is formed on the wafer surface, thewafer surface is cut into multiple monolithic semiconductor substrates,each of which has a signal conditioner formed thereon. If the signalconditioner 36,136, 236 has been formed on the surface of the wafer andthe wafer cut into an individual monolithic semiconductor substrate 22,122, 222, the substrate (or each of a plurality of substrates) is thenrotated. A sensor 34,134, 234 is then formed, the sensor 34,134, 234 andthe signal conditioner 36, 136, 236, being electrically connected andoriented orthogonally relative to each other.

[0043] The method further includes forming at least one integratedconductor 42,142, 242 on the monolithic semiconductor substrate.Preferably, the at least one integrated conductor is formed by dopingthe monolithic semiconductor substrate with an appropriate trivalent,pentavalent, or other doping material for making the semiconductorconductive so as to thereby form the integrated conductor having thedesired conductive properties for completing a conductive path betweenthe sensor 34,134,234 and the signal conditioner 36,136,236. Using theat least one integrated conductor 42,142, 242 as an electrical juncture,the conductive path between the sensor 34,134, 234 and the signalconditioner 36,136, 236 is completed by electrically connecting thesensor 34,134, 234 to one of the at least one integrated conductors42,142, 242 and electrically connecting the signal conditioner 36, 136,236 to the same integrated conductor 42,142, 242 to thereby form theconductive path.

[0044] In the drawings and specification, there have been disclosed atypical preferred embodiment of the invention, and although specificterms are employed, the terms are used in a descriptive sense only andnot for purposes of limitation. The invention has been described inconsiderable detail with specific reference to these illustratedembodiments. It will be apparent, however, that various modificationsand changes can be made within the spirit and scope of the invention asdescribed in the foregoing specification and as defined in the appendedclaims.

That claimed is:
 1. A compact sensing apparatus comprising: a monolithicsemiconductor substrate having a sensor surface and a signal conditionersurface, the sensor surface being smaller than the signal conditionersurface; a sensor formed in the sensor surface of the monolithicsemiconductor substrate for generating a sensing signal in response to apredetermined physical stimulus; and a signal conditioner formed in thesignal conditioner surface of the monolithic semiconductor substrate andelectrically connected to the sensor for conditioning the sensingsignal.
 2. A compact sensing apparatus as defined in claim 1, whereinthe signal conditioner is electrically connected to the sensor via anelectrical connection comprising at least one integrated conductorformed in the monolithic semiconductor substrate and extending over anedge portion of the monolithic semiconductor substrate shared by thesensor surface and the signal conditioner surface.
 3. A compact sensingapparatus as defined in claim 1, wherein the sensor and the signalconditioner are electrically connected via a conductive path comprisingat least one integrated conductor formed in the monolithic semiconductorsubstrate and at least one pair of metal conductors formed on themonolithic semiconductor substrate, the at least one integratedconductor positioned to extend over an edge of the monolithicsemiconductor substrate shared by the sensor surface and the signalconditioner surface, one of the at least one pair of metal conductorsconnected to the at least one integrated conductor and extending alongthe sensor surface to connect to the sensor formed therein, and theother of the at least one pair of metal conductors connected to the atleast one integrated conductor and extending along the signalconditioner surface to connect to the signal conditioner formed thereinto thereby provide the conductive path between the sensor and the signalconditioner.
 4. A compact sensing apparatus as defined in claim 3,wherein each of the at least one integrated conductors is formed byheavily doping the monolithic semiconductor substrate in at least oneregion of the monolithic semiconductor substrate that extends over anedge portion of the monolithic semiconductor substrate shared by thesensor surface and the signal conditioner surface.
 5. A compact sensingapparatus as defined in claim 4, wherein the conductive path between thesensor and the signal conditioner defines a first conductive path, andwherein the apparatus further includes a second conductive path, thesecond conductive path comprising an electrical conductor electricallyconnected to the signal conditioner and extending therefrom to connectto a preselected electrical device positioned remotely from the sensingapparatus to thereby form a conductive path between the compact sensingapparatus and the preselected electrical device.
 6. A compact sensingapparatus as defined in claim 5, the apparatus further comprising a baseon which the monolithic substrate is positioned for providing supportthereto.
 7. A compact sensing apparatus as defined in claim 6, theapparatus further comprising an encapsulation encapsulating at least aportion of the signal conditioner for providing a protective covertherefor, the electrical conductor extending through the encapsulationto thereby provide an electrical connection between the sensingapparatus and a preselected electrical device positioned outside theencapsulation.
 8. A compact sensing apparatus as defined in claim 6,wherein the sensor is a magnetoresistor.
 9. A compact sensing apparatusas defined in claim 6, wherein the sensor is a Hall element.
 10. Acompact sensing apparatus comprising: a monolithic semiconductorsubstrate comprising a wafer surface and an orthogonal surface, thewafer surface and the orthogonal surface being oriented orthogonal toeach other; a sensor formed in the orthogonal surface of the monolithicsemiconductor substrate for generating a sensing signal in response to apredetermined physical stimulus; a signal conditioner formed in thewafer surface of the monolithic semiconductor substrate and electricallyconnected to the sensor for conditioning the sensing signal; a base onwhich the monolithic semiconductor substrate is mounted for supportingthe substrate-mounted sensor and signal conditioner; an encapsulationconnected to the base and encapsulating at least the signal conditionermounted thereon to provide a protective covering for at least the signalconditioner; and an electrical conductor electrically connected to thesignal conditioner and extending outside the encapsulation forconnecting the sensing apparatus to a preselected device.
 11. A compactsensing apparatus as defined in claim 10, wherein the signal conditioneris electrically connected to the sensor via an electrical connectioncomprising at least one integrated conductor formed in the monolithicsemiconductor substrate and extending over an edge portion of themonolithic semiconductor substrate shared by the orthogonal surface andthe wafer surface.
 12. A compact sensing apparatus as defined in claim11, wherein each of the at least one integrated conductors is formed byheavily doping the monolithic semiconductor substrate in at least oneregion of the monolithic semiconductor substrate that extends over anedge portion of the monolithic semiconductor substrate shared by thewafer surface and the orthogonal surface.
 13. A compact sensingapparatus as defined in claim 10, wherein the sensor and the signalconditioner are electrically connected via a conductive path comprisingat least one integrated conductor formed in the monolithic semiconductorsubstrate and at least one pair of metal conductors formed on themonolithic semiconductor substrate, the at least one integratedconductor positioned to extend over an edge of the monolithicsemiconductor substrate shared by the wafer surface and the orthogonalsurface, one of the at least one pair of metal conductors connected tothe at least one integrated conductor and extending along the orthogonalsurface to connect to the sensor formed therein, and the other of the atleast one pair of metal conductors connected to the at least oneintegrated conductor and extending along the wafer surface to connect tothe signal conditioner formed therein to thereby provide the conductivepath between the sensor and the signal conditioner.
 14. A compactsensing apparatus as defined in claim 10, wherein the sensor is amagnetoresistor.
 15. A compact sensing apparatus as defined in claim 10,wherein the sensor is a Hall element.
 16. A compact magnetic sensingapparatus comprising a magnetic sensor formed in a monolithicsemiconductor substrate to generate a sensing signal in response to apredetermined physical stimulus and a signal conditioner formed in thesame substrate and positioned at a right angle relative to the magneticsensor, the signal conditioner being responsive to the magnetic sensorto condition the sensing signal generated by the sensor.
 17. A compactmagnetic sensing apparatus as defined in claim 16, wherein the sensorand the signal conditioner are electrically connected via a conductivepath comprising at least one integrated conductor formed in themonolithic semiconductor substrate.
 18. A compact sensing apparatus asdefined in claim 17, wherein each of the at least one integratedconductors is formed by heavily doping the monolithic semiconductorsubstrate in at least one region of the monolithic semiconductorsubstrate that extends over an edge portion of the monolithicsemiconductor substrate.
 19. A compact sensing apparatus as defined inclaim 18, wherein the conductive path between the sensor and the signalconditioner defines a first conductive path, and wherein the apparatusfurther includes a second conductive path, the second conductive pathcomprising an electrical conductor electrically connected to the signalconditioner and extending therefrom to connect to a preselectedelectrical device positioned remotely from the sensing apparatus tothereby form a conductive path between the compact sensing apparatus andthe preselected electrical device.
 20. A compact sensing apparatus asdefined in claim 16, wherein the sensor and the signal conditioner areelectrically connected via a conductive path comprising at least oneintegrated conductor formed in the monolithic semiconductor substrateand at least one pair of metal conductors formed on the monolithicsemiconductor substrate.
 21. A compact sensing apparatus as defined inclaim 20, wherein each of the at least one integrated conductors isformed by heavily doping the monolithic semiconductor substrate in atleast one region of the monolithic semiconductor substrate that extendsover an edge portion of the monolithic semiconductor substrate.
 22. Acompact sensing apparatus as defined in claim 21, wherein the conductivepath between the sensor and the signal conditioner defines a firstconductive path, and wherein the apparatus further includes a secondconductive path, the second conductive path comprising an electricalconductor electrically connected to the signal conditioner and extendingtherefrom to connect to a preselected electrical device positionedremotely from the sensing apparatus to thereby form a conductive pathbetween the compact sensing apparatus and the preselected electricaldevice.
 23. A compact sensing apparatus as defined in claim 16, theapparatus further comprising a base on which the monolithic substrate ispositioned for providing support thereto.
 24. A compact sensingapparatus as defined in claim 23, the apparatus further comprising anencapsulation encapsulating at least a portion of the signal conditionerfor providing a protective cover therefor.
 25. A compact sensingapparatus as defined in claim 24, wherein the encapsulation defines aprotective encapsulation of nonmagnetic material that partiallyencapsulates the monolithic semiconductor substrate, the sensor formedin the substrate, and the signal conditioner formed in the substrate,and wherein the apparatus further comprises a magnetic encapsulationpartially that partially encapsulates the monolithic semiconductorsubstrate, the sensor formed in the substrate, and the signalconditioner formed in the substrate.
 26. A compact sensing apparatus asdefined in claim 16, wherein the sensor is a magnetoresistor.
 27. Acompact sensing apparatus as defined in claim 16, wherein the sensor isa Hall element.
 28. A compact sensing apparatus comprising a sensorformed in a monolithic semiconductor substrate to generate a sensingsignal in response to a predetermined physical stimulus and a signalconditioner positioned at a right angle relative to the sensor, thesignal conditioner being responsive to the sensor to condition thesensing signal generated by the sensor.
 29. A compact sensing apparatusas defined in claim 28, wherein the sensor and the signal conditionerare electrically connected via a conductive path comprising at least oneintegrated conductor formed in the monolithic semiconductor substrateand at least one pair of metal conductors formed on the monolithicsemiconductor substrate.
 30. A compact sensing apparatus as defined inclaim 29, wherein each of the at least one integrated conductors isformed by heavily doping the monolithic semiconductor substrate in atleast one region of the monolithic semiconductor substrate that extendsover an edge portion of the monolithic semiconductor substrate.
 31. Acompact sensing apparatus as defined in claim 30, wherein the conductivepath between the sensor and the signal conditioner defines a firstconductive path, and wherein the apparatus further includes a secondconductive path, the second conductive path comprising an electricalconductor electrically connected to the signal conditioner and extendingtherefrom to connect to a preselected electrical device positionedremotely from the sensing apparatus to thereby form a conductive pathbetween the compact sensing apparatus and the preselected electricaldevice.
 32. A compact sensing apparatus as defined in claim 31, theapparatus further comprising a base on which the monolithic substrate ispositioned for providing support thereto.
 33. A compact sensingapparatus as defined in claim 32, the apparatus further comprising anencapsulation encapsulating at least a portion of the signal conditionerfor providing a protective cover therefor.
 34. A method for forming acompact sensing apparatus comprising the steps of positioning a sensoron a monolithic semiconductor substrate and positioning a signalconditioner on the same monolithic semiconductor substrate, the sensorand the signal conditioner being electrically connected and orientedorthogonally relative to each other.
 35. A method as defined in claim34, the method further comprising forming at least one integratedconductor on the monolithic semiconductor substrate.
 36. A method asdefined in claim 35, wherein the at least one integrated conductor isformed by doping the monolithic semiconductor substrate.
 37. A method asdefined in claim 34, the method further comprising forming at least onepair of conductors on the monolithic semiconductor substrate.
 38. Amethod as defined in claim 37, wherein each of the pair of conductors isa metal conductor, one of the at least one pair of conductors beingattached to the sensor and extending therefrom to connect to anintegrated conductor and the other of the at least one pair ofconductors being attached to the signal conditioner and extendingtherefrom to connect to the same integrated conductor.
 39. A method forforming a compact sensing apparatus comprising positioning a sensor on amonolithic semiconductor substrate, the sensor being orientedorthogonally to a signal conditioner on the same monolithicsemiconductor substrate.
 40. A method as defined in claim 39, the methodfurther comprising electrically connecting the sensor to the signalconditioner by forming a conductive path between the sensor and thesignal conditioner, the conductive path being formed by doping themonolithic semiconductor to form at least one integrated conductor andelectrically connecting the sensor to one of the at least one integratedconductors and electrically connecting the signal conditioner to thesame integrated conductor to thereby form the conductive path.